The Vermont Gallium Nitride (V-GaN) Tech Hub — a consortium led by the University of Vermont (UVM) and including ...

The bilateral funding from Innovate UK and Innosuisse will support the two-year QDHIGHSWIR research project into overcoming ...

Onsemi says the addition SiC JFET technology will complement its existing EliteSiC power portfolio and enable the company to ...

Fraunhofer ISE and partners have developed a SiC-based medium voltage system technology for fast charging stations that will ...

Electrical measurements on these diodes revealed that increasing their temperature from ambient to 573K produces a fall in ...

David Marshall, as director of programmes, will oversee Filtronic’s portfolio of critical programmes, driving strategic ...

Efficient Power Conversion Corporation (EPC) has introduced the GaN-based EPC91200, a fully configured motor drive inverter ...

Preparing to offer just that in significant volume within the next few years is the Israeli-based producer of GaN power ...

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Richard Hogg, chief technical officer of UK-based company III-V Epi, is advocating using GaAs epitaxial regrowth for many emerging, semiconductor laser applications.

The US Department of Commerce has signed a preliminary memorandum of terms with Macom Technology to provide up to $70 million ...

Researchers at the Fraunhofer Institute for Photonic Microsystems IPMS have developed novel OLED stacks that enable ...