Thanks to the debut of the 2nm node in 2026, iPhone 18 buyers should not worry about performance or overheating,.

The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...

D materials in 3D transistors; electrochemical memristive mechanism; matching substrates for power electronics.

Advances in materials and architecture could lead to silicon-free chip manufacturing thanks to a new type of transistor.

GIDL is primarily caused by band-to-band tunneling (BTBT) at the drain junction under high electric field conditions. This ...

Researchers propose 3D semiconductor architectures using 2D semiconductor materials for better performance and scalability ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.

By way of example, TSMC's N3E node as used in the latest Apple chips has gate pitch of at minimum 45 nm and a metal pitch of ...

Peking University has published its findings on a wafer-scale 2D GAAFET in Nature, pointing a new path into the Angstrom era ...

The anode-gate configuration also showed strong amplification ... and microbial fuel cells using organic electrochemical transistors, Device (2025). DOI: 10.1016/j.device.2025.100714 ...

DRAM periphery: From SiON-based gate stacks to high-k/metal gates Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or poly-Si/SiON ...