Researchers propose 3D semiconductor architectures using 2D semiconductor materials for better performance and scalability ...
DRAM periphery: From SiON-based gate stacks to high-k/metal gates Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or poly-Si/SiON ...
By way of example, TSMC's N3E node as used in the latest Apple chips has gate pitch of at minimum 45 nm and a metal pitch of ...
A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.
VIJAYAWADA: The world can witness the arrival of a groundbreaking, gate-all-around nanosheet transistor technology, poised to ...
GIDL is primarily caused by band-to-band tunneling (BTBT) at the drain junction under high electric field conditions. This ...
It carries the capability to manage or modify current or voltage flow, amplify and produce electrical signals, and act as a switch or gate. The impressive fact is that trillions of these transistors ...
The study describes how the team developed a gate-all-around field-effect transistor (GAAFET) using bismuth-based materials. This design is a significant departure from the Fin Field-Effect Transistor ...
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Chinese university designed 'world's first silicon-free 2D GAAFET transistor,' claims new bismuth-based tech is both the fastest and lowest-power transistor yetPeking University has published its findings on a wafer-scale 2D GAAFET in Nature, pointing a new path into the Angstrom era ...
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